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| Datasheet File OCR Text: |
| HIGH-POWERGaAlAsEMITTERCHIPS .024 .005 .006 D 2 PLACES OD-24X24-C FEATURES * High current capability * 2 bond pads for uniform output .024 * Gold contacts for high reliability bonding * High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless otherwise specified. EMITTING SURFACE .005 .006 N P .006 .003 .005 RoHS GOLD CONTACTS ELECTRO-OPTICAL CHARACTERISTICS AT 25C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 200mA IR = 10 A VR = 0V 5 MIN 7 TYP 10 880 1.6 30 60 80 MAX UNITS mW nm nm Peak Emission Wavelength, P Spectral Bandwidth at 50%, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 2 Volts Volts pF sec sec 0.7 0.7 ABSOLUTE MAXIMUM RATINGS AT 25C Power Dissipation Continuous Forward Current Reverse Voltage 400mW 200mA 5V 7A Peak Forward Current (10 s, 300 Hz) Storage and Operating Temperature Range Maximum Junction Temperature -65C to 150C 150C The exact performance data depends on your package configuration and technique. Data listed in this specification is for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days from the shipment date. Opto Diode must be notified of any discrepancies within this period. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
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